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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
IXFH 18N60P IXFV 18N60P IXFV 18N60PS
VDSS
ID25
RDS(on) trr
= =
600 V 18 A 400 m 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Tranisent TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 5 TC = 25C
Maximum Ratings 600 600 30 40 18 45 18 30 1.0 10 360 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C C
TO-247 AD (IXFH)
D (TAB)
PLUS220 (IXFV)
G D S
D (TAB)
PLUS220SMD (IXFV...S)
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-247)
300 260
1.13/10 Nm/lb.in. 6 4 g g
G = Gate S = Source
G S D (TAB)
TO-247 PLUS220 & PLUS220SMD
D = Drain TAB = Drain
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 2.5 mA VGS = 30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125C
Characteristic Values Min. Typ. Max. 600 3.0 5.5 100 25 250 400 V V
Features
l l
l
nA A A m
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
l l l
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
Easy to mount Space savings High power density
DS99390E(03/06)
(c) 2006 IXYS All rights reserved
IXFH 18N60P IXFV 18N60P IXFV 18N60PS
Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 9 16 2500 VGS = 0 V, VDS = 25 V, f = 1 MHz 280 23 21 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 5 (External) 22 62 22 50 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 15 18 0.35 (TO-247, PLUS220) 0.21 S pF pF pF ns ns ns ns
Dim.
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
1 2 3
TO-247 (IXFH) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS = 20 V; ID = 0.5 ID25, Note 1
nC nC nC C/W C/W
Source-Drain Diode Symbol IS ISM VSD trr QRM FRM Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IS = 18 A, -di/dt = 100 A/s VR = 100 V, VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 18 54 1.5 200 0.8 5 A A V ns C A
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
PLUS220 (IXFV) Outline
Note 1: Pulse test, t 300 s, duty cycled 2 % PLUS220SMD (IXFV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXFH 18N60P IXFV 18N60P IXFV 18N60PS
Fig. 1. Output Characteristics @ 25C
18 16 14 V GS = 10V 8V 7V 40 35 30 V GS = 10V 8V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
I D - Amperes
12 6V 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 5V
25 20
7V
6V 15 10 5 5V 0 0 3 6 9 12 15 18 21 24 27 30
V DS - Volts
V DS - Volts
Fig. 3. Output Characteristics @ 125C
18 16 14 V GS = 10V 7V 3.2
Fig. 4. R DS(on) Normalized to ID = 9A Value vs. Junction Temperature
V GS = 10V 2.8
R DS(on) - Normalized
2.4 I D = 18A
I D - Amperes
12 10 8 6 4 2 0 0 2 4 6 8 10
6V
2
1.6
I D = 9A
5V
1.2 0.8
0.4 12 14 16 18 -50 -25 0 25 50 75 100 125 150
V DS - Volts
T J - Degrees Centigrade
Fig. 5. R DS(on) Normalized to ID = 9A Value vs. Drain Current
3.2 3 2.8 V GS = 10V TJ = 125C 20 18 16 14
Fig. 6. Maximum Drain Current v s. Case Temperature
R DS(on) - Normalized
2.6
I D - Amperes
TJ = 25C 0 5 10 15 20 25 30 35 40 45
2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8
12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
T C - Degrees Centigrade
(c) 2006 IXYS All rights reserved
IXFH 18N60P IXFV 18N60P IXFV 18N60PS
Fig. 7. Input Admittance
40 24 35 30 25 20 15 10 5 0 3.5 4 4.5 5 5.5 6 6.5 7 TJ = 125C 25C - 40C 20 TJ = - 40C 25C 125C
Fig. 8. Transconductance
g f s - Siemens
I D - Amperes
16
12
8
4
0 0 5 10 15 20 25 30 35 40
V GS - Volts
I D - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
70 60 8 50 7 10 9 V DS = 300V I D = 9A I G = 10mA
Fig. 10. Gate Charge
I S - Amperes
V GS - Volts
TJ = 25C 0.9 1 1.1
40 TJ = 125C 30 20
6 5 4 3 2
10 1 0 0.3 0.4 0.5 0.6 0.7 0.8 0 0 5 10 15 20 25 30 35 40 45 50
V SD - Volts
Q G - NanoCoulombs
Fig. 11. Capacitance
10,000 f = 1 MHz C iss 100
Fig. 12. Forward-Bias Safe Operating Area
Capacitance - PicoFarads
RDS(on) Limits 25s C oss
I D - Amperes
1,000
100s 10 1ms 10ms
100 C rss
TJ = 150C TC = 25C
DC
10 0 5 10 15 20 25 30 35 40
1 10 100 1000
V DS - Volts
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 18N60P IXFV 18N60P IXFV 18N60PS
Fig. 13. Maximum Transient Thermal Resistance
1.000
R (th)JC - C / W
0.100
0.010 0.0001
0.001
0.01
0.1
1
10
Pulse W idth - Seconds
(c) 2006 IXYS All rights reserved

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